US Patent Issued to STMicroelectronics International on Sept. 29 for "Non-volatile memory having first and second leday circuits, and electronic system and method" (Italian Inventors)

पोस्टेड ऑन: 2026-09-30

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,532, issued on Sept. 29, was assigned to STMicroelectronics International N.V. (Geneva). "Non-volatile memory having first and second leda... और पढ़ें

US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Sept. 29 for "3D memory block having low-resistance source/drain buried layer stacked architecture" (Chinese Inventor)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,533, issued on Sept. 29, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China). "3D memory block having low-res... और पढ़ें

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,534, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the memory device"... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 29 for "Memory device, memory system including the same, and operating method of the memory device" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,535, issued on Sept. 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device, memory system including the... और पढ़ें

US Patent Issued to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION on Sept. 29 for "Memory device performing in-memory computing" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,536, issued on Sept. 29, was assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Seoul, South Korea). "Memory device performing in-memo... और पढ़ें

US Patent Issued to Micron Technology on Sept. 29 for "Managing allocation of blocks across planes in a memory sub-system" (California Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,537, issued on Sept. 29, was assigned to Micron Technology Inc. (Boise, Idaho). "Managing allocation of blocks across planes in a memory s... और पढ़ें

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,538, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the memory device"... और पढ़ें

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,539, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the memory device"... और पढ़ें

US Patent Issued to Sandisk Technologies on Sept. 29 for "Read method enhancement to reduce read disturb in mixed-mode memory storage regions" (Indian, American Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,540, issued on Sept. 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Read method enhancement to reduce read disturb in ... और पढ़ें

US Patent Issued to Micron Technology on Sept. 29 for "Cascade model for determining read level voltage offsets based on wordline group memory cells" (California Inventors)

पोस्टेड ऑन: 2026-09-30

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ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,541, issued on Sept. 29, was assigned to Micron Technology Inc. (Boise, Idaho). "Cascade model for determining read level voltage offsets ... और पढ़ें

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US Patent Issued to STMicroelectronics International on Sept. 29 for "Non-volatile memory having first and second leday circuits, and electronic system and method" (Italian Inventors)

US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Sept. 29 for "3D memory block having low-resistance source/drain buried layer stacked architecture" (Chinese Inventor)

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 29 for "Memory device, memory system including the same, and operating method of the memory device" (South Korean Inventors)

US Patent Issued to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION on Sept. 29 for "Memory device performing in-memory computing" (South Korean Inventors)

US Patent Issued to Micron Technology on Sept. 29 for "Managing allocation of blocks across planes in a memory sub-system" (California Inventors)

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Sept. 29 for "Read method enhancement to reduce read disturb in mixed-mode memory storage regions" (Indian, American Inventors)

US Patent Issued to Micron Technology on Sept. 29 for "Cascade model for determining read level voltage offsets based on wordline group memory cells" (California Inventors)